1.碳纳米管复合宏观体的可控制备及应用探索
2.单壁碳纳米管及其衍生结构的可控制备

论文专著
1.Zhang, F.; Hou, P. X.; Liu, C.; Wang, B. W.; Jiang, H.; Chen, M. L.; Sun, D. M.; Li, J. C.; Cong, H. T.; Kauppinen, E. I.; Cheng, H. M., Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution. Nat. Commun. 2016, 7, 8.
2.Zhang, F.; Hou, P. X.; Liu, C.; Cheng, H. M., Epitaxial growth of single-wall carbon nanotubes. Carbon 2016, 102, 181-197.
3.张峰、刘畅、成会明等编著，《碳纳米管》第一章，化学工业出版社，北京，2018
4.Zhang, F.; Sun, J.; Zheng, Y. G.; Hou, P. X.*; Liu, C.*; Cheng, M.; Li, X.; Cheng, H. M.; Chen, Z., The importance of H2 in the controlled growth of semiconducting single-wall carbon nanotubes. J. Mater. Sci. Technol. 2020, 54, 105-111.
5.Hou, P. X. ;# Zhang, F.; # Zhang, L.; Liu C.;*Cheng, H. M.* Synthesis of carbon nanotubes by floating catalyst chemical vapor deposition and their applications, Adv. Fun. Mater. 2021, 2108541(共同一作)
6.Majeed, A.; Hou, P. X.*; Zhang, F.; Tabassum, H.; Li, X.; Li, G. X.; Liu, C.*; Cheng, H. M., A freestanding single-wall carbon nanotube film decorated with N-doped carbon-encapsulated Ni nanoparticles as a bifunctional electrocatalyst for overall water splitting. Adv. Sci. 2019, 6 (12), 8.
7.Hu, X. G.; Hou, P. X.*; Liu, C.*; Zhang, F.; Liu, G.; Cheng, H. M., Small-bundle single-wall carbon nanotubes for high-efficiency silicon heterojunction solar cells. Nano Energy 2018, 50, 521-527.
8.Wang, Y. J.; Cheng, M.; Wang, L.; Zhou, D. M.; He, S. X.; Liang, L. Y.; Zhang, F.; Liu, C.*; Wang, D. Q.*; Yuan, J. H.*, Nanocrystalline graphite nanopores for DNA sensing. Carbon 2021, 176, 271-278.
9.Cheng, M.; Wang, B. W.; Hou, P. X.*; Li, J. C.; Zhang, F.; Luan, J.; Cong, H. T.; Liu, C.*; Cheng, H. M., Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst. Carbon 2018, 135, 195-201.
10.Li, J. C.; Hou, P. X.*; Zhao, S. Y.; Liu, C.*; Tang, D. M.; Cheng, M.; Zhang, F.; Cheng, H. M., A 3D bi-functional porous N-doped carbon microtube sponge electrocatalyst for oxygen reduction and oxygen evolution reactions. Energy Environ. Sci. 2016, 9 (10), 3079-3084.
申请专利：
1.刘畅、张峰、侯鹏翔、成会明，窄带隙分布、高纯度半导体性单壁碳纳米管的制备方法，专利号：ZL201610088012.3
2.刘畅、李鑫、张峰、侯鹏翔、张莉莉、成会明，一种通过基底设计可控生长金属性单壁碳纳米管的方法，申请号：202011365818.5
3.刘畅、李鑫、张峰、侯鹏翔、成会明，一种窄直径分布、高纯度金属性单壁碳纳米管的制备方法，申请号：202010709224.5
4.刘畅、于长平、张峰、侯鹏翔、成会明，一种制备单壁碳纳米管@六方氮化硼复合薄膜的方法， 申请号：202111306522.0